Matulionis, Arvydas: search on Z-Library

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1

Stress test measurements of lattice-matched InAlN/AlN/GaN HFET structures

Jacob H. Leach, Mo Wu, Xianfeng Ni, Xing Li, Ümit Özgür, Hadis Morkoç, Juozas Liberis, Emilis Šermukšnis, Arvydas Matulionis, Hailing Cheng, Çagliyan Kurdak, Yong-Tae Moon

Journal:

physica status solidi (a)

Year:

2010

Language:

english

File:

PDF, 184 KB

english, 2010

2

Saga of efficiency degradation at high injection in InGaN light emitting diodes

AVRUTIN, Vitaliy, HAFIZ, Shopan A., ZHANG, Fan, ÖZGÜR, Ümit, BELLOTTI, Enrico, BERTAZZI, Francesco, GOANO, Michele, MATULIONIS, Arvydas, ROBERTS, Adam T., EVERITT, Henry O., MORKOÇ, Hadis

Journal:

TURKISH JOURNAL OF PHYSICS

Year:

2014

Language:

english

File:

PDF, 3.64 MB

english, 2014

3

HighâPerformance BeMgZnO/ZnO Heterostructure Field Effect Transistors

Ding, Kai, Avrutin, Vitaliy, Izyumskaya, Natalia, ÃzgÃ¼r, Ãmit, MorkoÃ§, Hadis, Å ermukÅ¡nis, Emilis, Matulionis, Arvydas

Journal:

physica status solidi (RRL) - Rapid Research Letters

Year:

2020

File:

PDF, 822 KB

2020

4

SPIE Proceedings [SPIE Integrated Optoelectronic Devices 2007 - San Jose, CA (Saturday 20 January 2007)] Gallium Nitride Materials and Devices II - Accumulation of hot phonons in GaN and related structures

Matulionis, Arvydas, Morkoc, Hadis, Litton, Cole W., Matulionienė, Ilona

Year:

2007

Language:

english

File:

PDF, 268 KB

english, 2007

5

[IEEE 2017 International Conference on Noise and Fluctuations (ICNF) - Vilnius, Lithuania (2017.6.20-2017.6.23)] 2017 International Conference on Noise and Fluctuations (ICNF) - Hot-electron noise spectroscopy for HFET channels

Sermuksnis, Emilis, Liberis, Juozapas, Simukovic, Artur, Matulionis, Arvydas, Ullah, Md Barkat, Toporkov, Mykyta, Avrutin, Vitaliy, Ozgur, Umit, Morkoc, Hadis

Year:

2017

Language:

english

File:

PDF, 3.44 MB

english, 2017

6

SPIE Proceedings [SPIE SPIE OPTO: Integrated Optoelectronic Devices - San Jose, CA (Saturday 24 January 2009)] Gallium Nitride Materials and Devices IV - Hot phonons in InAlN/AlN/GaN heterostructure 2DEG channels

Matulionis, Arvydas, Morkoç, Hadis, Morkoç, Hadis, Litton, Cole W., Chyi, Jen-Inn, Nanishi, Yasushi, Piprek, Joachim, Yoon, Euijoon

Year:

2009

Language:

english

File:

PDF, 243 KB

english, 2009

7

SPIE Proceedings [SPIE OPTO - San Francisco, California (Saturday 23 January 2010)] Gallium Nitride Materials and Devices V - Plasmon-assisted dissipation of LO-mode heat in nitride 2DEG channels

Chyi, Jen-Inn, Matulionis, Arvydas, Liberis, Juozapas, Nanishi, Yasushi, Morkoç, Hadis, Morkoç, Hadis, Litton, Cole W., Piprek, Joachim, Yoon, Euijoon

Year:

2010

Language:

english

File:

PDF, 179 KB

english, 2010

8

Effect of interparticle collisions on energy relaxation of carriers in semiconductors

Rossella Brunetti, Carlo Jacoboni, Arvydas Matulionis, Vincentas Dienys

Journal:

Year:

1985

Language:

english

File:

PDF, 265 KB

english, 1985

9

Ultrafast decay of non-equilibrium (hot) phonons in GaN-based 2DEG channels

Arvydas Matulionis

Journal:

physica status solidi (c)

Year:

2009

Language:

english

File:

PDF, 168 KB

english, 2009

10

[IEEE 2015 International Conference on Noise and Fluctuations (ICNF) - Xian, China (2015.6.2-2015.6.6)] 2015 International Conference on Noise and Fluctuations (ICNF) - Hot-electron noise and energy relaxation in wurtzite ZnO

Sermuksnis, Emilis, Liberis, Juozapas, Matulionis, Arvydas, Toporkov, Mykyta, Avrutin, Vitaliy, Ozgur, Umit, Morkoc, Hadis

Year:

2015

Language:

english

File:

PDF, 124 KB

english, 2015

11

SPIE Proceedings [SPIE SPIE's First International Symposium on Fluctuations and Noise - Santa Fe, NM (Sunday 1 June 2003)] Noise in Devices and Circuits - Fast and ultrafast dissipation and fluctuations in two-dimensional channels for nitride and arsenide FETs

Matulionis, Arvydas, Deen, M. Jamal, Celik-Butler, Zeynep, Levinshtein, Michael E.

Year:

2003

Language:

english

File:

PDF, 303 KB

english, 2003

12

[IEEE 2013 International Conference on Noise and Fluctuations (ICNF) - Montpellier, France (2013.06.24-2013.06.28)] 2013 22nd International Conference on Noise and Fluctuations (ICNF) - Electron energy relaxation in wurtzite ZnO and GaN

Sermuksnis, Emilis, Ramonas, Mindaugas, Liberis, Juozapas, Matulionis, Arvydas, Avrutin, Vitaliy, Liu, Huiyong, Izyumskaya, Natalia, Ozgur, Umit, Morkoc, Hadis

Year:

2013

Language:

english

File:

PDF, 166 KB

english, 2013

13

Electron density window for best frequency performance, lowest phase noise and slowest degradation of GaN heterostructure field-effect transistors

Matulionis, Arvydas

Journal:

Semiconductor Science and Technology

Year:

2013

Language:

english

File:

PDF, 1.10 MB

english, 2013

14

SPIE Proceedings [SPIE SPIE OPTO - San Francisco, California, United States (Saturday 1 February 2014)] Gallium Nitride Materials and Devices IX - Effect of electron density on cutoff frequency of III-N HFETs

Chyi, Jen-Inn, Nanishi, Yasushi, Morkoç, Hadis, Piprek, Joachim, Yoon, Euijoon, Fujioka, Hiroshi, Matulionis, Arvydas, Morkoç, Hadis

Year:

2014

Language:

english

File:

PDF, 232 KB

english, 2014

15

FLUCTUATIONS AND ULTRAFAST PROCESSES IN VOLTAGE-BIASED TWO-DIMENSIONAL CHANNELS

MATULIONIS, ARVYDAS

Journal:

International Journal of High Speed Electronics and Systems

Year:

2008

Language:

english

File:

PDF, 197 KB

english, 2008

16

Hot-electron energy dissipation and inter-electron collisions in GaN WZ

Zubkute, Tatiana, Matulionis, Arvydas

Journal:

Semiconductor Science and Technology

Year:

2002

Language:

english

File:

PDF, 207 KB

english, 2002

17

Drift Velocity Limitation in GaN HEMT Channels

MATULIONIS, ARVYDAS

Journal:

International Journal of High Speed Electronics and Systems

Year:

2007

Language:

english

File:

PDF, 213 KB

english, 2007

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